Etching mechanism Of Y2O3 thin films in high density Cl-2/Ar plasma
- Authors
- Kim, YC; Kim, CI
- Issue Date
- Sep-2001
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.19, no.5, pp 2676 - 2679
- Pages
- 4
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 19
- Number
- 5
- Start Page
- 2676
- End Page
- 2679
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25187
- DOI
- 10.1116/1.1399316
- ISSN
- 0734-2101
- Abstract
- In this study Y2O3 thin films were etched with an inductively coupled plasma. The etch rate of Y2O3 and the selectivity of Y2O3 to YMnO3 were investigated by varying the Cl-2/(Cl-2+Ar) gas mixing ratio. The maximum etch rate of Y2O3 and the selectivity of Y2O3 to YMnO3 were 302 Angstrom /min and 2.4, respectively, at a Cl-2/(Cl-2+Ar) gas mixing ratio of 0.2. Based on x-ray photoelectron spectroscopy analysis, it was concluded that die Y2O3 thin film was dominantly etched by Ar ion bombardment and was assisted by the chemical reaction of a Cl radical. This result was confirmed by secondary ion mass spectroscopy analysis with the presence of a Y-Cl bond at 124.4 (amu). (C) 2001 American Vacuum Society.
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