Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET 구조를 위한ZrO2 Buffer Layer의 영향Effect of ZrO2 Buffer Layers for Pt/Bi3.25La0.75Ti3O12/ZrO2/Si(MFIS)-FET Structures
- Authors
- 김경태; 김창일
- Issue Date
- 2005
- Publisher
- 한국전기전자재료학회
- Keywords
- MFIS-FET; BLT; ZrO2; Ferroelectric; Non-volatile memory device; MFIS 전계효과 트랜지스터
- Citation
- 전기전자재료학회논문지, v.18, no.5, pp 439 - 444
- Pages
- 6
- Journal Title
- 전기전자재료학회논문지
- Volume
- 18
- Number
- 5
- Start Page
- 439
- End Page
- 444
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28175
- ISSN
- 1226-7945
- Abstract
- We investigated the structural and electrical properties of BLT films grown on Si covered with ZrO2 buffer layer. The BLT thin film and ZrO2 buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the ZrO2 layer. AES and TEM show no interdiffusion and reaction that suppressed using the ZrO2 film as a buffer layer. The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the ZrO2 layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using ZrO2 buffer layer. The results show that the ZrO2 buffer layers are prospective candidates for applications in MFIS-FET memory devices.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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