Etching properties of lead-zirconate-titanate thin films in Cl-2/Ar and BCl3/Ar gas chemistries
- Authors
- Koo, SM; Kim, DP; Kim, KT; Song, SH; Kim, C
- Issue Date
- Jul-2004
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp 1519 - 1523
- Pages
- 5
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 22
- Number
- 4
- Start Page
- 1519
- End Page
- 1523
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/29803
- DOI
- 10.1116/1.1764816
- ISSN
- 0734-2101
1520-8559
- Abstract
- Etching characteristics of lead-zirconate-titanate (PZT) thin films fabricated by the sol-gel process were investigated using Cl-2/Ar and BCl3/Ar inductively coupled plasma, respectively. The maximum etch rate of PZT thin films was obtained: Cl-2 (70%)/Ar (30%) and BCl3 (70%)/Ar (30%) gas mixing ratio. The maximum etch rate was 160 nm/min at Cl-2 (70%) /Ar (30%) and 179 nm/min at BCl3 (70%)/Ar(30%). Also, the etch rate was measured by varying the etching parameters such as rf power, dc-bias voltage, and chamber pressure. As rf power was raised, the etch rate of the PZT thin films increased in both Cl-2 /Ar and BCl3 /Ar gas conditions. The increase of dc-bias voltage increases the PZT etch rate, and as the chamber pressure increases, the etch rate of PZT films decreases. Plasma diagnostics were performed using a Langmuir probe. (C) 2004 American Vacuum Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.