Radiation-Tolerant p-Type SnO Thin-Film Transistors
- Authors
- Jeong, Ha-Yun; Kwon, Soo-Hun; Joo, Hyo-Jun; Shin, Min-Gyu; Jeong, Hwan-Seok; Kim, Dae-Hwan; Kwon, Hyuck-In
- Issue Date
- Jul-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- SnO; p-type oxide thin-film transistor; proton irradiation; radiation tolerance
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp 1124 - 1127
- Pages
- 4
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 7
- Start Page
- 1124
- End Page
- 1127
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32851
- DOI
- 10.1109/LED.2019.2914252
- ISSN
- 0741-3106
1558-0563
- Abstract
- This present work investigated the effects of proton-beam irradiation on SnO-based p-type oxide thin-film transistors (TFTs) for the first time. The experiments were performed using a 5-MeV proton beam with doses ranging from 10(12) to 10(14) p . cm(-2). The experimental results showed that the transfer curves of the p-type SnO TFT rarely changed following the proton irradiation at every irradiation condition, indicating that the p-type SnO TFT could be potentially useful in implementing complementary-logic-based oxide TFT circuits operating in harsh environments. The insensitivity of current conduction paths to SnO lattice disorder was considered as a possible mechanism for the observed radiation tolerance of the p-type SnO TFTs.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32851)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.