Dependence of the etching characteristics of SBT thin films on the amount of BCl 3 added to a Cl 3/Ar inductively coupled plasma
- Authors
- Yeo, Ji-Won; Kim, Dong-Pyo; Kim, Chang-Il
- Issue Date
- May-2004
- Publisher
- 한국물리학회
- Keywords
- SBT; ICP; OES; XPS
- Citation
- Journal of the Korean Physical Society, v.44, no.5, pp 1092 - 1096
- Pages
- 5
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 44
- Number
- 5
- Start Page
- 1092
- End Page
- 1096
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/35857
- ISSN
- 0374-4884
1976-8524
- Abstract
- The etch characteristics of SBT films were investigated using Cl-2/Ar inductively coupled plasma with BCl3 added. A 10% addition of BCl3 into the Cl-2/Ar plasma caused an increase in the etch rate, but an addition of over 20% BCl3 caused a decrease in the etch rate. As the rf power and the dc bias were increased, the etch rate of SBT increased. At 800 W and -200 V, we obtained the maximum etch rate of 764 Angstrom/min. The etch rate change in SBT was studied by using a combination of optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS). In the OES analysis, the volume densities of Cl radicals and BCl molecules were monitored. In the XPS analysis, SrCl and B-O bonds were detected on the surface of SBT treated with a BCl3/Cl-2/Ar plasma. The SrCl layer on the surface prohibits any possible chemical reaction or reduction of physical sputtering by positive ions.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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