Cl2/BCl3/Ar 플라즈마에서 반응성 이온들에 의해 식각된 ZnO 박막 표면 연구A Study of the Etched ZnO Thin Films Surface by Reactive Ion in the Cl2/BCl3/Ar Plasma
- Authors
- 우종창; 김창일
- Issue Date
- 2010
- Publisher
- 한국전기전자재료학회
- Keywords
- Zinc oxide; Atomic emission spectroscopy; Atomic force microscopy; X-ray diffraction
- Citation
- 전기전자재료학회논문지, v.23, no.10, pp 747 - 751
- Pages
- 5
- Journal Title
- 전기전자재료학회논문지
- Volume
- 23
- Number
- 10
- Start Page
- 747
- End Page
- 751
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/36091
- ISSN
- 1226-7945
- Abstract
- In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in Cl2/BCl3/Ar plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for Cl2/BCl3/Ar=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in Cl2/BCl3/Ar plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in Cl2/BCl3/Ar plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.
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