Suppression of Interfacial Disorders in Solution-Processed Metal Oxide Thin-Film Transistors by Mg Doping
- Authors
- Heo J.S.; Jeon S.-P.; Kim I.; Lee W.; Kim Y.-H.; Park, Sung Kyu
- Issue Date
- Dec-2019
- Publisher
- American Chemical Society
- Keywords
- magnesium (Mg) doping; metal oxide semiconductor and dielectric; Mg diffusion; solution process; thin-film transistors (TFTs)
- Citation
- ACS Applied Materials and Interfaces, v.11, no.51, pp 48054 - 48061
- Pages
- 8
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 11
- Number
- 51
- Start Page
- 48054
- End Page
- 48061
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/37574
- DOI
- 10.1021/acsami.9b17642
- ISSN
- 1944-8244
1944-8252
- Abstract
- The fabrication of high-performance metal oxide thin-film transistors (TFTs) using a low-temperature solution process may facilitate the realization of ultraflexible and wearable electronic devices. However, the development of highly stable oxide gate dielectrics at a low temperature has been a challenging issue since a considerable amount of residual impurities and defective bonding states is present in low-temperature-processed gate dielectrics causing a large counterclockwise hysteresis and a significant instability. Here, we report a new approach to effectively remove the residual impurities and suppress the relevant dipole disorder in a low-temperature-processed (180 °C) AlOxgate dielectric layer by magnesium (Mg) doping. Mg is well known as a promising material for suppression of oxygen vacancy defects and improvement of operational stability due to a high oxygen vacancy formation energy (Evo= 9.8 eV) and a low standard reduction potential (E0 =-2.38 V). Therefore, with an adequate control of Mg concentration in metal oxide (MO) films, oxygen-related defects could be easily suppressed without additional treatments and then stable metal-oxygen-metal (M-O-M) network formation could be achieved, causing excellent operational stability. By optimal Mg doping (10%) in the InOxchannel layer, Mg:InOxTFTs exhibited negligible clockwise hysteresis and a field-effect mobility of >4 cm2 V-1 s-1. Furthermore, the electric characteristics of the low-temperature-processed AlOxgate dielectric with high impurities were improved by Mg diffusion originating in Mg doping, resulting in stable threshold voltage shift in the bias stability test. Copyright © 2019 American Chemical Society.
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