Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors
- Authors
- Shin, Jae Cheol; Kwon, Sung Min; Kang, Jingu; Jeon, Seong Pil; Heo, Jae-Sang; Kim, Yong-Hoon; Cho, Sung Woon; Park, Sung Kyu
- Issue Date
- 3-Jun-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- low-temperature crystallization; catalytic metals-accelerated crystallization; solution-processed metal oxide; titanium oxide; thin-film transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.22, pp 25000 - 25010
- Pages
- 11
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 22
- Start Page
- 25000
- End Page
- 25010
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/42701
- DOI
- 10.1021/acsami.0c04401
- ISSN
- 1944-8244
1944-8252
- Abstract
- As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO2 (c-TiO2) films required high-temperature crystallization conditions (>= 500-600 degrees C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO2 films, enabling high-quality c-TiO2 films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO2) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO2 to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (>= 300 degrees C) crystallization of the solution-processed a-TiO2 films and the fabrication of high-performance solution-processed c-TiO2 thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability.
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