Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors
- Authors
- Jeon, Seong-Pil; Heo, Jae Sang; Kim, Insoo; Kim, Yong-Hoon; Park, Sung Kyu
- Issue Date
- 30-Dec-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- solution-processed amorphous oxide semiconductor (AOS); metal doping/diffusion; metal ionic radius; suppression of residual impurities/mobile ions; low temperature; thin-film transistors (TFTs)
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.52, pp 57996 - 58004
- Pages
- 9
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 52
- Start Page
- 57996
- End Page
- 58004
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/44092
- DOI
- 10.1021/acsami.0c16068
- ISSN
- 1944-8244
1944-8252
- Abstract
- Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal-oxygen bond formation, causing poor electrical performance and stability. Here, we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via elemental diffusion between metallic ion-doped InOx (M:InOx) ternary oxide semiconductor and AlOx gate dielectric layers. Particularly, it was revealed that metallic dopants such as magnesium (Mg) and hafnium (Hf) having a small ionic radius, a high Gibbs energy of oxidation, and bonding dissociation energy could successfully diffuse into the low-quality AlOx gate dielectric layer and effectively reduce the structural defects and residual impurities present in the bulk and at the semiconductor/dielectric interface. Through an extensive investigation on the compositional, structural, and electrical properties of M:InOx/AlOx thin-film transistors (TFTs), we provide direct evidences of elemental diffusion occurred between M:InOx and AlOx layers as well as its contribution to the electrical performance and operational stability. Using the elemental diffusion process, we demonstrate solution-processed Hf:InOx TFTs using a lowtemperature (180 degrees C) AlOx gate dielectric having a field-effect mobility of 2.83 cm(2) V-1.s(-1) and improved bias stability. Based on these results, it is concluded that the elemental diffusion between oxide semiconductor and gate dielectric layers can play a crucial role in realizing oxide TFTs with enhanced structural and interfacial integrity.
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