Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation
- Authors
- Kim, K.-T.; Moon, S.; Kim, M.; Jo, J.-W.; Park, C.-Y.; Kang, S.-H.; Kim, Y.-H.; Park, Sung Kyu
- Issue Date
- Oct-2020
- Publisher
- Wiley-VCH Verlag
- Keywords
- amorphous oxide thin-film transistors; mesa-island structure; scalability; stress-diffusion; ultraflexibility
- Citation
- Advanced Materials, v.32, no.40
- Journal Title
- Advanced Materials
- Volume
- 32
- Number
- 40
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/44101
- DOI
- 10.1002/adma.202003276
- ISSN
- 0935-9648
1521-4095
- Abstract
- The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol–gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.06 cm2 V−1 s−1 and a threshold voltage of −0.99 V with less than 9% variation, followed by 10 000 bending cycles with a radius of 125 μm. More importantly, the site-specific monolithic formation of mesa pillar-structured devices can provide fully integrated logic circuits such as seven-stage ring-oscillators, meeting the industrially needed device density and scalability. To exploit the underlying stress-diffusive mechanism, a physical model is provided by using a variety of chemical, structural, and electrical characterizations along with multidomain finite-element analysis simulation. The physical models reveal that a highly scalable and robust device can be achieved via the site-specific mesa architecture, by enabling generation of multineutral layers and fine-tuning the accumulated stresses on specific element of devices with their diffusion out into the boundary of the mesa regions. © 2020 Wiley-VCH GmbH
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