Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator
- Authors
- Seo, Woo-Hyung; Hong, Chan-Hwa; Yang, Ji-Woong; Na, Yun-Been; Kwon, Hyuck-In; Cheong, Woo-Seok
- Issue Date
- May-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Touch Screen Panel; ITO; SiOC; Cu
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp 3089 - 3091
- Pages
- 3
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 5
- Start Page
- 3089
- End Page
- 3091
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4470
- DOI
- 10.1166/jnn.2017.14068
- ISSN
- 1533-4880
1533-4899
- Abstract
- We developed 30 '' window-unified capacitive touch screen panel (G2-TSP), where the transparent electrodes for sensing and driving lines were directly patterned on the glass. In this study, index-matched ITO as the main electrode was fabricated using by sputtering system which had sheet resistance of 30 ohm/square and transmittance of 88.6% at wavelength of 550 nm. We used SiOC of contact-hole type as a dielectric layer for high deposition rate and etching selectivity. Finally, we developed copper material (110 nm-thick) as bridge and bezel metal with sheet resistance of 2 ohm/square. From these processes, we successfully fabricated the 30 inch G2 TSP with no-short and open parts of TSP-cells. We fabricated G2 TSP with the wet-etching process, linearity of 0.86 mm and accuracy of 0.83 mm have been achieved.
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