Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach
- Authors
- Lee, Sang-Kwon; Choi, Heon-Jin; Pauzauskie, Peter; Yang, Peidong; Cho, Nam-Kyu; Park, Hyo-Derk; Suh, Eun-Kyung; Lim, Kee-Young; Lee, Hyung-Jae
- Issue Date
- Oct-2004
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.241, no.12, pp 2775 - 2778
- Pages
- 4
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH
- Volume
- 241
- Number
- 12
- Start Page
- 2775
- End Page
- 2778
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49452
- DOI
- 10.1002/pssb.200404989
- ISSN
- 0370-1972
1521-3951
- Abstract
- We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 similar to 200 nm and lengths of 5 similar to 20 mum. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-bearn lithography. In our electrical measurement, the carrier concentration and mobility were approximate to 2 similar to 4 x 10(18) cm(-3) and 60 similar to 70 cm(2)/Vs, respectively.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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