Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)
- Authors
- Kim, Tae-Hong; Jang, Chan-Oh; Seong, Han-Kyu; Choi, Heon-Jin; Lee, Sang-Kwon
- Issue Date
- Apr-2009
- Publisher
- SPRINGER
- Keywords
- Heterojunction; Mn-doped GaN nanowires; dielectrophoresis
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.38, no.4, pp 505 - 510
- Pages
- 6
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 38
- Number
- 4
- Start Page
- 505
- End Page
- 510
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49469
- DOI
- 10.1007/s11664-009-0675-9
- ISSN
- 0361-5235
1543-186X
- Abstract
- We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 k Omega to 130 k Omega. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.
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