Optical and electrical transport properties in silicon carbide nanowires
- Authors
- Seong, Han-Kyu; Choi, Heon-Jin; Lee, Sang-Kwon; Lee, Jung-Il; Choi, Doo-Jin
- Issue Date
- Aug-2004
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.85, no.7, pp 1256 - 1258
- Pages
- 3
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 85
- Number
- 7
- Start Page
- 1256
- End Page
- 1258
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49472
- DOI
- 10.1063/1.1781749
- ISSN
- 0003-6951
1077-3118
- Abstract
- We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100 nm and lengths of several mum. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2x10(-2) Omega cm for 0 V of gate voltage and 15 cm(2)/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties. (C) 2004 American Institute of Physics.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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