Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors
- Authors
- Lee, S.-Y.; Hyung, J.-H.; Lee, S.-K.
- Issue Date
- May-2008
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.44, no.11, pp 695 - +
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 44
- Number
- 11
- Start Page
- 695
- End Page
- +
- ISSN
- 0013-5194
1350-911X
- Abstract
- Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding similar to 1 mu A at low bias voltages.
- Files in This Item
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.