Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)
- Authors
- Lee, Seung-Yong; Jang, Chan-Oh; Hyung, Jung-Hwan; Kim, Dong-Joo; Kim, Tae-Hong; Lee, Sang-Kwon; Koo, Sang-Mo; Kim, Moon-Deok
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Ion-implantation; Si nanowires; Spheroidization; Activation annealing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp 28 - 31
- Pages
- 4
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 28
- End Page
- 31
- ISSN
- 0374-4884
1976-8524
- Abstract
- We report on the fabrication and the electrical characterization of n-channel silicon nanowire (SiNW) field-effect transistors (FETs), which were prepared using phosphorous (P)-ion implantation in the region of the source/drain in SiNWs at a (lose of 1 x 10(14) ions/cm(2) and an energy of 10 keV. The current-voltage characteristics of the P-implanted SiNW FET exhibit clear n-type characteristics. We also observed critical changes in the surface morphology on the SiNWs after annealing at temperatures above 950 degrees C.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.