Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors
- Authors
- Jang, Chan-Oh; Kim, Tae-Hong; Lee, Seung-Yong; Kim, Dong-Joo; Lee, Sang-Kwon
- Issue Date
- Aug-2008
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.19, no.34
- Journal Title
- NANOTECHNOLOGY
- Volume
- 19
- Number
- 34
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49635
- DOI
- 10.1088/0957-4484/19/34/345203
- ISSN
- 0957-4484
1361-6528
- Abstract
- We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had similar to 40 times lower specific contact resistances (SCRs) of 5.9 x 10(-6) +/- 8.8 x 10(-6) Omega cm(2) compared to the values of Ti/Au ohmic contacts (2.6 x 10(-4) +/- 3.4 x 10(-4) Omega cm(2)). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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