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The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires
- Authors
- Hwang, Chanoh; Hyung, Jung-Hwan; Lee, Seung-Yong; Jang, Chan-Oh; Kim, Tae-Hong; Choi, Pyung; Lee, Sang-Kwon
- Issue Date
- May-2008
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.10
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 41
- Number
- 10
- ISSN
- 0022-3727
1361-6463
- Abstract
- We report on the fabrication and characterization of Ti/Au Ohmic contacts to unintentionally doped gallium nitride (n-GaN) nanowires. The specific contact resistance and resistivity were determined to be similar to 1.1 x 10(-5) +/- 5 x 10(-6) Omega cm(2) and similar to 6.9 x 10(-3) +/- 3 x 10(-4) Omega cm, respectively, with a diameter of similar to 140 nm using a transmission line model (TLM). We also present the electrical characterizations of metal/GaN nano-Schottky diodes with four Schottky metals (Al, Ti, Cr and Au) on unintentionally doped GaN nanowires using current-voltage (I-V) characteristics at room temperature. We observed the abnormal electrical characteristics of GaN nano-Schottky diodes for each Schottky metal.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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