Si nanowire p-FET with asymmetric source-drain I-V characteristics
- Authors
- Lee, Sang-Kwon; Lee, Seung-Yong; Rogdakis, Konstantinos; Jang, Chan-Oh; Kim, Dong-Joo; Bano, Edwige; Zekentes, Konstantinos
- Issue Date
- Mar-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nanostructures; Semiconductors; Nanofabrication; Electronic transport
- Citation
- SOLID STATE COMMUNICATIONS, v.149, no.11-12, pp 461 - 463
- Pages
- 3
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 149
- Number
- 11-12
- Start Page
- 461
- End Page
- 463
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49773
- DOI
- 10.1016/j.ssc.2008.12.036
- ISSN
- 0038-1098
1879-2766
- Abstract
- We report on the electrical characteristics and the effects of source/drain Schottky barrier heights (SBHs) in a lightly implanted silicon nanowire field-effect transistor (SiNW FET). We prepared the SiNW FETs by boron implantation with a dose of 1 x 10(12) ions/cm(2) and an energy of 10 keV. Our results indicated that the nature of the metal-contacts on the source/drain electrodes had a significant impact on the current-voltage characteristics for B-implanted SiNW FETs. The current-voltage (I-D-V-DS) characteristics for the B-implanted SiNW FETs with a symmetric IV behavior exhibited a clear p-channel FET behavior with a field-effect mobility of similar to 0.4 cm(2)/Vs and a hole concentration of similar to 1.7 x 10(17) cm(-1). A 2D ATLAS simulation (SILVACO Inc.)with two different Schottky barrierheights of source/drain contacts to the SiNW supported the experimental results well. (C) 2008 Elsevier Ltd. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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