Single-crystalline diluted magnetic semiconductor GaN : Mn nanowires
- Authors
- Choi, Heon-Jin; Seong, Han-Kyu; Chang, Joonyeon; Lee, Kyeong-Il; Park, Young-Ju; Kim, Ju-Jin; Lee, Sang-Kwon; He, Rongrui; Kuykendall, Tevye; Yang, Peidong
- Issue Date
- Jun-2005
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v.17, no.11, pp 1351 - +
- Journal Title
- ADVANCED MATERIALS
- Volume
- 17
- Number
- 11
- Start Page
- 1351
- End Page
- +
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49779
- DOI
- 10.1002/adma.200401706
- ISSN
- 0935-9648
1521-4095
- Abstract
- Current information technology relies on two independent processes: charge-based information processing (microprocessors) and spin-based data storage (magnetic hard drives).([1-5]) The prospect of simultaneously manipulating both charge and spin in a single semiconductor medium is provided by the exciting area of spintronics. Among many others, diluted magnetic semiconductors (DMSs) represent the most promising candidates for such applications. ([1-7]) Herein we report on the magneto- and optoelectronic properties of single-crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.01-0.09). These nanowires, which have diameters of similar to 10-100 nm and lengths of up to tens of micrometers, exhibit ferromagnetism with Curie temperatures (T(C)s) above 300 K and magnetoresistances (MRs) up to 250 K. Spin-dependent electron transport from single-nanowire transistors indicates the homogeneous nature of the ferromagnetic nanowires.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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