Fabrication of ion-implanted Si nanowire p-FETs
- Authors
- Lee, Seung-Yong; Jang, Chan-Oh; Kim, Dong-Joo; Hyung, Jung-Hwan; Rogdakis, Konstantinos; Bano, Edwige; Zekentes, Konstantinos; Lee, Sang-Kwon
- Issue Date
- Aug-2008
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.34, pp 13287 - 13291
- Pages
- 5
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 112
- Number
- 34
- Start Page
- 13287
- End Page
- 13291
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49802
- DOI
- 10.1021/jp804059g
- ISSN
- 1932-7447
1932-7455
- Abstract
- We have successfully demonstrated p-type silicon nanowire field-effect transistors (Si NW p-FETs) prepared using B-ion implantation with a dose of 1 x 10(13) ions/cm(2) and an energy of 10 keV. The experimental I-D-V-DS characteristics for B-implanted Si NW FETs revealed a clear p-channel FET behavior with a hole mobility of similar to 6.9 cm(2)/(V.s), a hole concentration of similar to 1.1 x 10(19) cm(-3), and a transconductance of similar to 29 nS/mu m at a V-DS of 0.1V. The B-implanted Si NWs were annealed at a temperature of 950 degrees C for 30 and 60 s. The 2D-ATHENA and ATLAS software were used to accurately simulate the device fabrication process and the electrical performance, respectively.
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