Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
- Authors
- Kuykendall, Tevye; Pauzauskie, Peter; Lee, Sangkwon; Zhang, Yanfeng; Goldberger, Joshua; Yang, Peidong
- Issue Date
- Aug-2003
- Publisher
- AMER CHEMICAL SOC
- Citation
- NANO LETTERS, v.3, no.8, pp 1063 - 1066
- Pages
- 4
- Journal Title
- NANO LETTERS
- Volume
- 3
- Number
- 8
- Start Page
- 1063
- End Page
- 1066
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50365
- DOI
- 10.1021/nl034422t
- ISSN
- 1530-6984
1530-6992
- Abstract
- High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time. Excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via the vapor-liquid-solid mechanism with gold, iron, or nickel as growth initiators and were found to have widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single-crystalline and were oriented predominantly along the [210] or [110] direction. Wires growing along the [210] orientation were found to have triangular cross-sections. Transport measurements confirmed that the wires were n-type and had electron mobilities of similar to65 cm(2)/V.s. Photoluminescence measurements showed band edge emission at 3.35 eV (at 5 K), with a marked absence of low-energy emission from impurity defects.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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