Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL)
- Authors
- Lee, Sang-Kwon; Seong, Han-Kyu; Choi, Ki-Chul; Cho, Narn-Kyu; Choi, Heon-Jin; Suh, Eun-Kyung; Nahm, Kee-Suk
- Issue Date
- 2006
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Keywords
- gallium nitride; nanowires; field effect transistor; e-beam lithography
- Citation
- SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, v.527-529, pp 1549 - 1552
- Pages
- 4
- Journal Title
- SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2
- Volume
- 527-529
- Start Page
- 1549
- End Page
- 1552
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50747
- DOI
- 10.4028/www.scientific.net/MSF.527-529.1549
- ISSN
- 0255-5476
1662-9752
- Abstract
- We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8 x 8 mm(2) silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 similar to 70 cm(2)/(VS)-S-.. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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