열악한 환경에서 작동가능 가스센서 응용을 위한 4H-실리콘 카바이드 오믹접촉에 관한 전기적인 특성 연구Electrical characterization of ohmic contacts to 4H-silicon carbide for harsh environment operation gas sensor applications
- Authors
- 이상권
- Issue Date
- 2004
- Publisher
- 한국물리학회
- Keywords
- Silicon carbide; Ohmic contacts; TLM structure; 4H-SiC; Long-term stability; Silicon carbide; Ohmic contacts; TLM structure; 4H-SiC; Long-term stability
- Citation
- 새물리, v.48, no.3, pp 254 - 259
- Pages
- 6
- Journal Title
- 새물리
- Volume
- 48
- Number
- 3
- Start Page
- 254
- End Page
- 259
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50782
- ISSN
- 0374-4914
2289-0041
- Abstract
- We have investigated the electrical characteristics of three dierent stacks of ohmic contacts(TiW/Ti/Pt, TiW, and Ni/TaSix/Pt) on highly doped n-type 4H-silicon carbide for harsh environmentoperation gas sensor applications such as automotive and space aircraft applications. The rsttwo samples were tested at 500 600 C in a vacuum chamber for up to 300 hours. From our TLMmeasurement, TiW contacts with a Ti glue layer and a Pt capping layer have stable specic contactresistance at high temperature in a vacuum chamber. The long-term reliability tests of ohmiccontacts in an oxidizing environment (20 % O2/N2) for up to 520 hours showed that TiW/Ti/Pthad the better stability and the lower contact resistance while Ni/TaSix/Pt ohmic contacts had asevere contact degradation due to the oxidation at the interface. Therefore, we believe that ourTiW based metallization schemes can be applied to gas sensor operating in a harsh environmentsuch as an oxidizing ambient.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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