Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits
- Authors
- Kim, Kwang Ho; Kim, Yong-Hoon; Kim, Hyun Jae; Han, Jeong-In; Park, Sung Kyu
- Issue Date
- Apr-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ring oscillator; solution process; thin-film transistor (TFT); zinc-tin-oxide (ZTO)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp 524 - 526
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 4
- Start Page
- 524
- End Page
- 526
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51187
- DOI
- 10.1109/LED.2011.2107494
- ISSN
- 0741-3106
1558-0563
- Abstract
- Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 +/- 0.29 cm(2)/V.s (W/L = 100/10 mu m) and subthreshold slope < 0.4 +/- 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of similar to 800 kHz with a supply voltage V-DD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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