Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits

Abstract

Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 +/- 0.29 cm(2)/V.s (W/L = 100/10 mu m) and subthreshold slope < 0.4 +/- 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of similar to 800 kHz with a supply voltage V-DD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.