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High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability
- Issue Date
- Apr-2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- amorphous semiconductors; Hall mobility; II-VI semiconductors; lithography; passivation; sol-gel processing; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.7, pp H256 - H258
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 12
- Number
- 7
- Start Page
- H256
- End Page
- H258
- ISSN
- 1099-0062
1944-8775
- Abstract
- We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 mu m) have shown a carrier mobility >5 cm(2)/V s with an on/off current ratio greater than 10(8) and a subthreshold slope < 1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations < 0.5-1 V after 1 h current and voltage bias stressing.
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