Layer dependence of out-of-plane electrical conductivity and Seebeck coefficient in continuous mono- to multilayer MoS2 films
- Authors
- Lee, Won-Yong; Kang, Min-Sung; Park, No-Won; Kim, Gil-Sung; Nguyen, Anh Duc; Choi, Jae Won; Yoon, Young-Gui; Kim, Yong Soo; Jang, Ho Won; Saitoh, Eiji; Lee, Sang-Kwon
- Issue Date
- 7-Dec-2021
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY A, v.9, no.47, pp 26896 - 26903
- Pages
- 8
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY A
- Volume
- 9
- Number
- 47
- Start Page
- 26896
- End Page
- 26903
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52200
- DOI
- 10.1039/d1ta07854b
- ISSN
- 2050-7488
2050-7496
- Abstract
- We report on a direct comparison of the out-of-plane thermoelectric properties, such as Seebeck coefficient and electrical conductivity, of atomically thin MoS2 films. The films were prepared by a chemical vapor deposition method and were simultaneously investigated using a Cu-sandwiched structure. Specifically, this is the first study that measures the out-of-plane Seebeck coefficients of atomically thin mono- and bilayer MoS2 at 300 K. At room temperature, out-of-plane Seebeck coefficients for MoS2 films with one, two, and seven layers were measured to be approximately 129.4, 143.3, and 152.2 mu V/K, respectively. Such behavior is seen because the increasing number of MoS2 layers increases the density of states of a system. In contrast to conventional thermoelectric materials, the electrical conductivities of these MoS2 films have the same tendency as the Seebeck coefficients. Our results show that thermoelectric devices can utilize the out-of-plane properties of MoS2 thin films with high power factors.
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