Etching properties of ZnS thin films in Cl-2/CF4/Ar plasma
- Authors
- Kim, D.P.; Kim, C.I.; Kwon, K.H.
- Issue Date
- Jul-2004
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- ZnS; Cl-2/CF4/Ar; optical emission spectroscopy (OES); X-ray photoelectron spectroscopy (XPS)
- Citation
- THIN SOLID FILMS, v.459, no.1-2, pp 131 - 136
- Pages
- 6
- Journal Title
- THIN SOLID FILMS
- Volume
- 459
- Number
- 1-2
- Start Page
- 131
- End Page
- 136
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53085
- DOI
- 10.1016/j.tsf.2003.12.128
- ISSN
- 0040-6090
1879-2731
- Abstract
- The manganese-doped zinc sulfide (ZnS:Mn) films were investigated in terms of etch rates and selectivity with inductively coupled plasma (ICP). The changes of volume density of etching species in Cl-2/CF4/Ar plasma were investigated with optical emission spectroscopy (OES). OES analysis indicated that the maximum Cl emission intensity was obtained with the gas mixture of 10% addition to CF4(20%)/Ar(80%) plasma. The changes of chemical states on the surface were analyzed with X-ray photoelectron spectroscopy (XPS). XPS study indicated that Zn was formed non-volatile etch by products and remained on the surface after etching of ZnS:Mn (0.39 wt.%) in Cl-2/CF4/Ar plasma. The etch rate of ZnS was gradually increased up to 10% addition of Cl-2 then decreased furthermore with increasing Cl-2 contents from 20 to 30%. The increase of etch rate can be explained by the effect of chemical and physical etching process. (C) 2003 Elsevier B.V. All rights reserved.
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