Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition
- Authors
- Kim, K.T.; Kim, C.I.
- Issue Date
- Apr-2005
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- ferroelectric properties; dielectric properties; ionic radius; lanthanides substitutions
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.118, no.1-3, pp 229 - 233
- Pages
- 5
- Journal Title
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
- Volume
- 118
- Number
- 1-3
- Start Page
- 229
- End Page
- 233
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53221
- DOI
- 10.1016/j.mseb.2004.12.035
- ISSN
- 0921-5107
1873-4944
- Abstract
- The effect of lanthanides (A= La, Eu, Ce, Dy, Yb)- substitution on the ferroelectric properties of bismuth titanate (Bi(3.25)A(0.75)Ti(3)O(12), BAT) thin films has been investigated. The structure and morphology of the films were analyzed using X-ray diffraction and scanning electron microscopy, respectively. After annealing at 700 degrees C, the BAT films exhibited a polycrystalline structure. As a increasing the ionic radius of the lanthanides element (Eu, Ce) with a smaller ionic radius than La in the pseudoperovskite layer, the BAT thin films showed well saturated P-E curves and the remanent polarization (2P(r)) values increased from 8.08 and 44 mu C/cm(2) at an applied voltage of 10 V. The BAT thin films exhibited no significant degradation of switching charge at least up to 5 x 10(9) switching cycles at a frequency of 100 kHz. Moreover, the BAT film capacitors have appeared good retention properties after 3 x 10(4) s at room temperature. (c) 2004 Elsevier B.V. All rights reserved.
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