Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide TransistorsEffects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors
- Authors
- Shan, Fei; Lee, Jae-Yun; Kim, Han-Sang; Sun, Hao-Zhou; Choi, Seong Gon; Heo, Kwan-Jun; Koh, Jung-Hyuk; Kim, Sung-Jin
- Issue Date
- May-2021
- Publisher
- 대한금속·재료학회
- Keywords
- Oxygen plasma · Multi-stacked IZO TFT · Solution process · RF plasma power
- Citation
- Electronic Materials Letters, v.17, no.3, pp 222 - 228
- Pages
- 7
- Journal Title
- Electronic Materials Letters
- Volume
- 17
- Number
- 3
- Start Page
- 222
- End Page
- 228
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54530
- ISSN
- 1738-8090
2093-6788
- Abstract
- We report on a method for fabricating solution-processed triple-multi-stacked indium zinc oxide (IZO) thin-fi lm transistors(TFTs) at a low annealing temperature using an oxygen plasma treatment technique at diff erent RF power levels of 120 W,150 W, 180 W, and 210 W. The oxygen plasma post-treatment is an additional process to optimize the surface state of IZOfi lms and to improve the electrical performance of the TFT device after using a low-temperature solution process insteadof a high-temperature annealing process. The plasma-treated TFT device exhibits improved electrical performance, withmobility of 5.1 ± 0.5 cm 2 /Vs, an on/off ratio of 2.5 × 10 8 , a threshold voltage of 2.6 ± 1.3 V, and a subthreshold swing of0.6 ± 0.1 V/dec when the RF power is 150 W. Therefore, the multi-stacked activity structure and the low RF power plasmapost-treatment process provides a simple and effi cient fabrication method that reduces the processing temperature, improvesthe electrical properties, and can be widely used in fl exible electronic devices.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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