Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors

Abstract

We report on a method for fabricating solution-processed triple-multi-stacked indium zinc oxide (IZO) thin-fi lm transistors(TFTs) at a low annealing temperature using an oxygen plasma treatment technique at diff erent RF power levels of 120 W,150 W, 180 W, and 210 W. The oxygen plasma post-treatment is an additional process to optimize the surface state of IZOfi lms and to improve the electrical performance of the TFT device after using a low-temperature solution process insteadof a high-temperature annealing process. The plasma-treated TFT device exhibits improved electrical performance, withmobility of 5.1 ± 0.5 cm 2 /Vs, an on/off ratio of 2.5 × 10 8 , a threshold voltage of 2.6 ± 1.3 V, and a subthreshold swing of0.6 ± 0.1 V/dec when the RF power is 150 W. Therefore, the multi-stacked activity structure and the low RF power plasmapost-treatment process provides a simple and effi cient fabrication method that reduces the processing temperature, improvesthe electrical properties, and can be widely used in fl exible electronic devices.