Epitaxial growth and optical band gap variation of ultrathin ZnTe films
- Authors
- Kim, Min Jay; Lee, Kyeong Jun; Kim, Hyun Don; Kim, Hyuk Jin; Choi, Byoung Ki; Lee, In Hak; Khim, Yeong Gwang; Heo, Jin Eun; Chang, Seo Hyoung; Choi, Eunjip; Chang, Young Jun
- Issue Date
- Apr-2022
- Publisher
- Elsevier B.V.
- Keywords
- Epitaxial film; GaAs substrate; Molecular beam epitaxy; Optical band gap; ZnTe
- Citation
- Materials Letters, v.313
- Journal Title
- Materials Letters
- Volume
- 313
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54936
- DOI
- 10.1016/j.matlet.2022.131725
- ISSN
- 0167-577X
1873-4979
- Abstract
- Zinc telluride (ZnTe) has attracted interests for its semiconducting, optoelectronic, and electrical switching properties. However, the growth mechanism of ultrathin epitaxial films is not well established. Here we present a systematic study of the growth ultrathin ZnTe films on GaAs (0 0 1) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction and synchrotron based high-resolution X-ray diffraction showed that both surface atomic ordering and single crystalline phase aligned to the substrate orientation with small variation of c-axis lattice in the ultrathin films. While the deviation of chemical compositions depended on the growth conditions, information on the variation of the band gap and in-gap states was obtained through spectroscopic ellipsometry analysis. Our study showed that single crystal ZnTe films can serve as a model system in the development of Ovonic threshold switching devices for cross-point device applications. © 2022
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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