Dual-Gate Multiple-Channel ZnO Nanowire Transistors
- Authors
- Kim, Dong-Joo; Hyung, Jung-Hwan; Seo, Deok-Won; Suh, Duk-Il; Lee, Sang-Kwon
- Issue Date
- May-2010
- Publisher
- SPRINGER
- Keywords
- ZnO; nanowire; field-effect transistor; alternating-current dielectrophoresis; surface passivation
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.39, no.5, pp 563 - 567
- Pages
- 5
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 39
- Number
- 5
- Start Page
- 563
- End Page
- 567
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/55280
- DOI
- 10.1007/s11664-009-0984-z
- ISSN
- 0361-5235
1543-186X
- Abstract
- We report on conventional multichannel ZnO nanowire field-effect transistors (FETs) operating in one device in a dual-gate mode. Our FETs were prepared by assembling ZnO nanowires on a Si substrate using an optimized dielectrophoresis technique with bottom-gate and top-gate FET structures. We observed that the enhancement of the electrical characteristics in FETs with top-gate mode operation results from a thinner gate oxide and top-gate geometry compared with FETs with bottom-gate mode operation. It was also verified that surface passivation strongly affected the electrical performance of ZnO nanowire FETs.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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