Interface-Induced Seebeck Effect in PtSe2/PtSe2van der Waals Homostructures
- Authors
- Lee, Won-Yong; Kang, Min-Sung; Kim, Gil-Sung; Choi, Jae Won; Park, No-Won; Sim, Yumin; Kim, Yun-Ho; Seong, Maeng-Je; Yoon, Young-Gui; Saitoh, Eiji; Lee, Sang-Kwon
- Issue Date
- Feb-2022
- Publisher
- American Chemical Society
- Keywords
- homostructure and heterostructure; hot carrier injection; in-plane Seebeck effect; interface-induced Seebeck effect; platinum diselenide; transition metal dichalcogenide; van der Waals
- Citation
- ACS Nano, v.16, no.2, pp 3404 - 3416
- Pages
- 13
- Journal Title
- ACS Nano
- Volume
- 16
- Number
- 2
- Start Page
- 3404
- End Page
- 3416
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/55371
- DOI
- 10.1021/acsnano.2c00359
- ISSN
- 1936-0851
1936-086X
- Abstract
- The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe2/PtSe2 van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe2 over high-resistance PtSe2 thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe2 films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe2/PtSe2 van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe2 (10 nm)/PtSe2 (2 nm) homostructure approximately 42% compared to that of a pure PtSe2 (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit. ©
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