Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitorsopen access
- Authors
- Chang, S.H.; Chae, S.C.; Lee, S.B.; Liu, C.; Noh, T.W.; Lee, J.S.; Kahng, B.; Jang, J.H.; Kim, M.Y.; Kim, D.-W.; Jung, C.U.
- Issue Date
- May-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.18
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 18
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56658
- DOI
- 10.1063/1.2924304
- ISSN
- 0003-6951
1077-3118
- Abstract
- We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses t(BE) and investigated their resistance switching behaviors. The capacitors with t(BE)>= 50 nm exhibited typical unipolar resistance memory switching, while those with t(BE)<= 30 nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. (C) 2008 American Institute Of Physics.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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