Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe2/PtSe2 Homostructureopen access
- Authors
- Lee, Won-Yong; Kang, Min-Sung; Choi, Jae Won; Kim, Si-Hoo; Park, No-Won; Kim, Gil-Sung; Kim, Yun-Ho; Saitoh, Eiji; Yoon, Young-Gui; Lee, Sang-Kwon
- Issue Date
- Dec-2022
- Publisher
- WILEY
- Keywords
- homostructure; hot-carrier injection; in-plane Seebeck effect; interfacial Seebeck effect; Mott relation; platinum diselenide; van der Waals
- Citation
- ADVANCED SCIENCE, v.9, no.36
- Journal Title
- ADVANCED SCIENCE
- Volume
- 9
- Number
- 36
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/59299
- DOI
- 10.1002/advs.202203455
- ISSN
- 2198-3844
2198-3844
- Abstract
- When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe2/PtSe2 homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe2 layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe2/PtSe2 homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe2 layers increase and observed a high Seebeck coefficient exceeding approximate to 188 mu V K-1 at 300 K in a four-layer-stacked PtSe2/PtSe2 homostructure.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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