Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductorsopen access
- Authors
- Kim, S.-H.; Jo, C.-H.; Bae, M.-S.; Ichimura, M.; Koh, Jung-Hyuk
- Issue Date
- Jan-2023
- Publisher
- Taylor and Francis Ltd.
- Keywords
- CO2 laser; crystallization; GaN; RF-magnetron sputtering; thin films
- Citation
- Journal of Asian Ceramic Societies, v.11, no.1, pp 68 - 79
- Pages
- 12
- Journal Title
- Journal of Asian Ceramic Societies
- Volume
- 11
- Number
- 1
- Start Page
- 68
- End Page
- 79
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/60546
- DOI
- 10.1080/21870764.2022.2151102
- ISSN
- 2187-0764
- Abstract
- Owing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant attention for applications in solar cells, power transistors, and high-electron-mobility transistors. Crystallized GaN thin film can be hardly prepared in thin film form by employing physical vapor deposition processes, such as reactive RF sputtering and pulsed laser deposition, because a high driving energy is required to deposit a thin film due to its high binding energy. Herein, GaN thin films were prepared by CO2 laser-assisted RF sputtering at a relatively low temperature of 200°C. The CO2 laser with a 10,600 nm wavelength shows excellent conversion efficiency from optical energy to thermal energy. At the optimized laser energy density of 0.98 W/mm2, GaN thin film can have a (0002) orientation with a bandgap energy of 3.26 eV. The crystalline, surface morphological, and optical properties of the fabricated GaN thin films were evaluated using X-ray diffraction, FE-SEM, X-ray photoelectron (XPS), and photoluminescence (PL) spectroscopy, and UV-vis spectrometry. The energy bandgap of the fabricated GaN thin film was measured using the Tauc plot and confirmed via PL. The film composition thus obtained was analyzed using XPS. © 2022 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan.
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