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Etching Characteristics of TaNO Thin Film for Top Electrode Materials Using Inductivity Coupled CF4/Ar Plasma
- Issue Date
- Dec-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- TaNO; Etching; OES; XPS; AES
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.12, pp 12882 - 12885
- Pages
- 4
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 12
- Start Page
- 12882
- End Page
- 12885
- ISSN
- 1533-4880
1533-4899
- Abstract
- In this research, we investigated the etch rate of TaNO thin film and selectivity with mask material (SiO2) in inductively coupled CF4/Ar plasma. As the CF4 content increased from 0% to 80% in CF4/Ar plasma, the etch rate of TaNO thin film was increased from 56.1 to 495.3 nm/min. The results of X-ray photoelectron spectroscopy (XPS) showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of non-volatile byproducts on the etched surface of TaNO thin film.
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