Electrical conductivity enhancement of epitaxially grown TiN thin filmsopen access
- Authors
- Khim, Yeong Gwang; Park, Beomjin; Heo, Jin Eun; Khim, Young Hun; Khim, Young Rok; Gu, Minseon; Rhee, Tae Gyu; Chang, Seo Hyoung; Han, Moonsup; Chang, Young Jun
- Issue Date
- Mar-2023
- Publisher
- 한국물리학회
- Keywords
- DC sputtering; Electrical conductivity; Electrode material; Epitaxial film; TiN
- Citation
- Journal of the Korean Physical Society, v.82, no.5, pp 486 - 490
- Pages
- 5
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 82
- Number
- 5
- Start Page
- 486
- End Page
- 490
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/66345
- DOI
- 10.1007/s40042-023-00729-6
- ISSN
- 0374-4884
1976-8524
- Abstract
- Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640℃ and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~ 30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high-temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications. © 2023, The Korean Physical Society.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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