Etching characteristics and surface modification of InGaSnO thin films under Cl-2/Ar plasma
- Authors
- Joo, Young-Hee; Choi, Jae-Won; Hou, Bo; Kwon, Hyuck-In; Um, Doo-Seung; Kim, Chang-Il
- Issue Date
- Oct-2023
- Publisher
- IOP Publishing Ltd
- Keywords
- InGaSnO; Cl-2-based plasma; etching mechanism; surface modification; plasma etching
- Citation
- PLASMA SCIENCE & TECHNOLOGY, v.25, no.10
- Journal Title
- PLASMA SCIENCE & TECHNOLOGY
- Volume
- 25
- Number
- 10
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/67403
- DOI
- 10.1088/2058-6272/acd588
- ISSN
- 1009-0630
2058-6272
- Abstract
- Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have investigated the plasma-etching characteristics of IGTO and changes in its properties after etching. In this study, the etching characteristics of IGTO were investigated using Cl-2/Ar plasma, and changes in surface properties were analyzed. Results showed that the etch rate increased with an increase in the proportion of Cl-2, with the highest etch rate observed at 69 nm min(-1) in pure Cl-2 plasma with a gas flow rate of 100 sccm. Furthermore, increased radio-frequency power caused a rise in the etch rate, while a process pressure of 15 mTorr was optimal. The primary etching mechanism for IGTO thin films under Cl-2 plasma was a chemical reaction, and an increased work function indicated the occurrence of defects on the surface. In addition, the etching process reduced the surface roughness of Cl-2-containing plasma, whereas the etching process in pure Ar plasma increased surface roughness. This study contributes to a better understanding of the plasma-etching characteristics of IGTO and changes in its properties after etching, providing valuable insights for IGTO-based applications.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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