Interface-driven seebeck effect in two-dimensional trilayer-stacked PtTe2/MoS2/MoS2 heterostructures via electron–electron interactions
- Authors
- Choi, Jae Won; Lee, Won-Yong; Kim, Si-Hoo; Kang, Min-Sung; Cho, Jung-Min; Park, No-Won; Kwon, Hyeok Jun; Kim, Yun-Ho; Kim, Gil-Sung; Yoon, Young-Gui; Lee, Sang-Kwon
- Issue Date
- Oct-2023
- Publisher
- Elsevier Ltd
- Keywords
- 2D heterostructure; Effective mass; Interface-driven Seebeck effect; Mott formula; Phonon drag; Platinum ditelluride
- Citation
- Nano Energy, v.115
- Journal Title
- Nano Energy
- Volume
- 115
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/67857
- DOI
- 10.1016/j.nanoen.2023.108713
- ISSN
- 2211-2855
2211-3282
- Abstract
- Two-dimensional (2D) platinum telluride (PtTe2), which is one of the promising metallic transition metal dichalcogenides, has been proven as an essential candidate for electronic devices, magnetic devices, type-II Dirac fermions, topological superconductors, and other optoelectronic applications. However, the formation and thermal transport as important thermoelectric (TE) device applications have not been realized in large-area 2D PtTe2 films due to their semi-metallic properties. Here, we report an innovative approach to enhance the in-plane TE power factors by piling the metallic PtTe2 films on high-resistance (> 10 MΩ) intrinsic MoS2 films to form bilayer-PtTe2/MoS2 (5 nm/7 nm)//sapphire and trilayer-PtTe2/MoS2/MoS2 (5 nm/7 nm/7 nm)//sapphire heterostructures via wet-transfer stacking method. Such approaches can be achieved by utilizing 2D/2D heterostructure to increase the electron effective mass due to the strong electron–electron interaction at interface under temperature gradient along the samples and ultimately increase Seebeck coefficients via interface-driven Seebeck effect along with a metallic high-conductivity top-PtTe2 films. The trilayer-stacked PtTe2/MoS2/MoS2 heterostructures exhibit an extremely high Seebeck coefficient of −21.6 μV/K and power factor of ∼0.2 mW/m·K2, which are 231 % and ∼727 %, higher than those of the metallic 5-nm-thick single PtTe2 film on the sapphire substrate, respectively. Our new physics and observation can pave the way toward an effective strategy for understating 2D/2D TMDC heterostructure materials for high Fig.-of-merit TE energy harvesting devices. © 2023 Elsevier Ltd
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