Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devicesopen access
- Authors
- Mahata, Chandreswar; Kim, Wonwoo; Kim, Shiwhan; Ismail, Muhammad; Kim, Min-Hwi; Kim, Sungjun; Park, Byung-Gook
- Issue Date
- Aug-2019
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- resistive switching; atomic layer deposition; CBRAM; copper; high-k dielectric
- Citation
- IEICE ELECTRONICS EXPRESS, v.16, no.16
- Journal Title
- IEICE ELECTRONICS EXPRESS
- Volume
- 16
- Number
- 16
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72120
- DOI
- 10.1587/elex.16.20190404
- ISSN
- 1349-2543
- Abstract
- Here, the resistive switching properties of Cu/Al2O3/p-Si and Cu/HfO2/p-Si devices are investigated in details. Both memory switching and threshold switching behaviors observed under different current compliance conditions. The transition between two switching modes is possible. Cu ion diffusion form conductive filaments inside the insulator and formation/dissociation mechanism induced the switching phenomenon. The device performances under both memory switching and threshold switching are possible for non-volatile storage memory and selector applications, respectively.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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