Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
- Authors
- Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Chen, Ying-Chen; Lee, Jong-Ho; Park, Byung-Gook
- Issue Date
- Aug-2017
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.19, no.29, pp 18988 - 18995
- Pages
- 8
- Journal Title
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Volume
- 19
- Number
- 29
- Start Page
- 18988
- End Page
- 18995
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72146
- DOI
- 10.1039/c7cp03120c
- ISSN
- 1463-9076
1463-9084
- Abstract
- Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p(++)-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities. The LRS was measured to be as low as 1 nA at a voltage of 1 V, because the SiNx layer maintains insulating properties for the LRS. The single-layered device suffers from uncontrollability of the conducting path, accompanied by the inherent randomness of switching parameters, weak immunity to breakdown during the reset process, and a high operating current. On the other hand, for a double-layered device, the effective conducting path in each layer, which can determine the operating current, can be well controlled by the I-CC during the initial forming and set processes. A one-step forming and progressive reset process is observed for a low-power mode, which differs from the high-power switching mode that shows a two-step forming and reset process. Moreover, nonlinear behavior in the LRS, whose origin can be attributed to the P-F conduction and F-N tunneling driven by abundant traps in the silicon-rich SiNx layer, would be beneficial for next-generation nonvolatile memory applications by using a conventional passive SiNx layer as an active dielectric.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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