Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memoryopen access
- Authors
- Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Yoon; Park, Byung-Gook
- Issue Date
- May-2017
- Publisher
- MDPI
- Keywords
- memory; resistive switching; self-compliance; silicon nitride
- Citation
- MATERIALS, v.10, no.5
- Journal Title
- MATERIALS
- Volume
- 10
- Number
- 5
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/72150
- DOI
- 10.3390/ma10050459
- ISSN
- 1996-1944
- Abstract
- Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n(+) Si and Ni/SiNx/n(++) Si resistive-switching random access memory devices. The Ni/SiNx/n(++) Si device's Si bottom electrode had a higher dopant concentration (As ion > 10(1)9 cm(-3)) than the Ni/SiNx/n(+) Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 10(18) cm(-3)), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.
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