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Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
- Issue Date
- May-2016
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- resistive random-access memory (RRAM); silicon nitride (Si3N4); bias polarity; switching parameters
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E99C, no.5, pp 547 - 550
- Pages
- 4
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E99C
- Number
- 5
- Start Page
- 547
- End Page
- 550
- ISSN
- 0916-8524
1745-1353
- Abstract
- In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p(+) Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.
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