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Study of Ethanolamine Surface Treatment on the Metal-Oxide Electron Transport Layer in Inverted InP Quantum Dot Light-Emitting Diodes
- Authors
- Jang, Ilwan; Kim, Jiwan; Park, Chang Jun; Ippen, Christian; Greco, Tonino; Oh, Min Suk; Lee, Jeongno; Kim, Won Keun; Wedel, Armin; Han, Chul Jong; Park, Sung Kyu
- Issue Date
- Nov-2015
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- InP QDs; quantum dot light-emitting diode (QD-LED); ethanolamine; zinc oxide
- Citation
- ELECTRONIC MATERIALS LETTERS, v.11, no.6, pp 1066 - 1071
- Pages
- 6
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 11
- Number
- 6
- Start Page
- 1066
- End Page
- 1071
- ISSN
- 1738-8090
2093-6788
- Abstract
- The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200 degrees C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature.
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