Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistorsopen access
- Authors
- Kim, Jaekyun; Park, Chang Jun; Yi, Gyeongmin; Choi, Myung-Seok; Park, Sung Kyu
- Issue Date
- Oct-2015
- Publisher
- MDPI AG
- Keywords
- organic thin film transistor; gate dielectric layer; self-assembled monolayer; photochemical activation; low-temperature sol-gel method; low-voltage operation
- Citation
- MATERIALS, v.8, no.10, pp 6926 - 6934
- Pages
- 9
- Journal Title
- MATERIALS
- Volume
- 8
- Number
- 10
- Start Page
- 6926
- End Page
- 6934
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9085
- DOI
- 10.3390/ma8105352
- ISSN
- 1996-1944
- Abstract
- A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 degrees C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm(2)/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-m thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.
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