Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics
- Authors
- Jeong, Chan-Yong; Lee, Daeun; Han, Young-Joon; Choi, Yong-Jin; Kwon, Hyuck-In
- Issue Date
- Aug-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- p-type SnO TFT; subgap density of states; temperature-dependent field-effect characteristics; Meyer-Neldel rule
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.8
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 30
- Number
- 8
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9314
- DOI
- 10.1088/0268-1242/30/8/085004
- ISSN
- 0268-1242
1361-6641
- Abstract
- This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV(-1) in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs.
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