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Cross-plane temperature-dependent thermal conductivity of Al-doped zinc oxide thin films

Authors
Park, Tae-HyunPark, No-WonKim, JinhwanLee, Won-YongKoh, Jung-HyukLee, Sang-Kwon
Issue Date
Jul-2015
Publisher
ELSEVIER SCIENCE SA
Keywords
Al-doped zinc oxide (ZnO); Thermal conductivity; 2D thin films; 3-omega technique; Sondheimer's model
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.638, pp 83 - 87
Pages
5
Journal Title
JOURNAL OF ALLOYS AND COMPOUNDS
Volume
638
Start Page
83
End Page
87
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9331
DOI
10.1016/j.jallcom.2015.03.065
ISSN
0925-8388
1873-4669
Abstract
We measured the cross-plane thermal conductivity of Al-doped zinc oxide (ZnO) with 0.5-1.5 at.% of Al. Al-doped ZnO thin films were prepared on SiO2/Si substrates by sol-gel spin coating. Thermal conductivity was measured at temperatures ranging from 20 to 300 K, using the four-point-probe 3-omega method. The measured thermal conductivity of the Al-doped ZnO thin films decreased as Al doping increasing up to 1.5 at.%. The average thermal conductivities of un-doped and Al-doped ZnO thin films were 1.1-5.6 W/m . K at 300 K. We suggest that this reduction of thermal conductivity with Al doping could reflect the combined effects of enhanced phonon scattering from grains and Al impurities, and the increasing porosity of the films with increasing Al doping. We also confirmed that the thermal conductivity of the films depends on Al doping. (C) 2015 Elsevier B.V. All rights reserved.
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대학원 (지능형에너지산업융합학과)
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