High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
- Authors
- Joo, Young-Hee; Kim, Chang-Il
- Issue Date
- May-2015
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- IGZO; Etching; ICP; XPS; OES
- Citation
- THIN SOLID FILMS, v.583, no.1, pp 40 - 45
- Pages
- 6
- Journal Title
- THIN SOLID FILMS
- Volume
- 583
- Number
- 1
- Start Page
- 40
- End Page
- 45
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/9548
- DOI
- 10.1016/j.tsf.2015.03.054
- ISSN
- 0040-6090
1879-2731
- Abstract
- We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700W, a DC-bias voltage of -150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF4/Ar(= 25: 75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF4/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. (C) 2015 Elsevier B.V. All rights reserved.
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